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GES5400R PNP Transistor

The GES5400R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES5400R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5400R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES5400R transistor as follows.

Circuit diagram symbol of the GES5400R transistor

GES5400R Transistor Specification

Transistor Code GES5400R
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 130V
Collector-Emitter Voltage (Maximum) VCE 120V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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