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GES5370 NPN Transistor

The GES5370 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5370 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5370 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5370 transistor as follows.

Circuit diagram symbol of the GES5370 transistor

GES5370 Transistor Specification

Transistor Code GES5370
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 7pF

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