GES5306A NPN Transistor

The GES5306A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5306A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5306A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5306A transistor as follows.

GES5306A Transistor Specification

Transistor Code		GES5306A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		7000
Transition Frequency	FT	25MHz
Collector Capacitance	CC	7pF

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