GES5306 NPN Transistor

The GES5306 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5306 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5306 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5306 transistor as follows.

GES5306 Transistor Specification

Transistor Code		GES5306
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		7000
Transition Frequency	FT	25MHz
Collector Capacitance	CC	7pF

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