GES5141 PNP Transistor

The GES5141 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES5141 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5141 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES5141 transistor as follows.

GES5141 Transistor Specification

Transistor Code		GES5141
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	6V
Collector-Emitter Voltage (Maximum)	VCE	6V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	300MHz
Collector Capacitance	CC	7pF

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