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GES5139 PNP Transistor

The GES5139 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES5139 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5139 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES5139 transistor as follows.

Circuit diagram symbol of the GES5139 transistor

GES5139 Transistor Specification

Transistor Code GES5139
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 300MHz
Collector Capacitance CC 5pF

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