GES5130 NPN Transistor

The GES5130 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5130 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5130 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5130 transistor as follows.

GES5130 Transistor Specification

Transistor Code		GES5130
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	1V
Forward Current Transfer Ratio (hFE Value)		12
Transition Frequency	FT	450MHz
Collector Capacitance	CC	3pF

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