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GES5128 NPN Transistor

The GES5128 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5128 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5128 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5128 transistor as follows.

Circuit diagram symbol of the GES5128 transistor

GES5128 Transistor Specification

Transistor Code GES5128
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 35
Transition Frequency FT 150MHz
Collector Capacitance CC 10pF

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