GES5088 NPN Transistor

The GES5088 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5088 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5088 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5088 transistor as follows.

GES5088 Transistor Specification

Transistor Code		GES5088
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.31W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	50MHz
Collector Capacitance	CC	4pF

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