GES4888 PNP Transistor

The GES4888 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES4888 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES4888 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES4888 transistor as follows.

GES4888 Transistor Specification

Transistor Code		GES4888
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	160MHz
Collector Capacitance	CC	4pF

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