GES4356 PNP Transistor

The GES4356 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES4356 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES4356 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES4356 transistor as follows.

GES4356 Transistor Specification

Transistor Code		GES4356
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	100MHz
Collector Capacitance	CC	30pF

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