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GES4250A PNP Transistor

The GES4250A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES4250A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES4250A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES4250A transistor as follows.

Circuit diagram symbol of the GES4250A transistor

GES4250A Transistor Specification

Transistor Code GES4250A
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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