GES4061 PNP Transistor

The GES4061 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES4061 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES4061 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES4061 transistor as follows.

GES4061 Transistor Specification

Transistor Code		GES4061
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		90

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