GES3905R NPN Transistor

The GES3905R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES3905R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3905R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES3905R transistor as follows.

GES3905R Transistor Specification

Transistor Code		GES3905R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.31W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	250MHz
Collector Capacitance	CC	4pF

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