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GES3900A NPN Transistor

The GES3900A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES3900A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3900A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES3900A transistor as follows.

Circuit diagram symbol of the GES3900A transistor

GES3900A Transistor Specification

Transistor Code GES3900A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 18V
Collector-Emitter Voltage (Maximum) VCE 18V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 80MHz
Collector Capacitance CC 12pF

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