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GES3646 NPN Transistor

The GES3646 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES3646 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3646 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES3646 transistor as follows.

Circuit diagram symbol of the GES3646 transistor

GES3646 Transistor Specification

Transistor Code GES3646
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 350MHz
Collector Capacitance CC 5pF

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