GES3636 PNP Transistor

The GES3636 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES3636 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3636 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES3636 transistor as follows.

GES3636 Transistor Specification

Transistor Code		GES3636
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	175V
Collector-Emitter Voltage (Maximum)	VCE	175V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	75MHz
Collector Capacitance	CC	12pF

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