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GES2714 NPN Transistor

The GES2714 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES2714 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES2714 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES2714 transistor as follows.

Circuit diagram symbol of the GES2714 transistor

GES2714 Transistor Specification

Transistor Code GES2714
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 18V
Collector-Emitter Voltage (Maximum) VCE 18V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 75
Collector Capacitance CC 12pF

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