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GES2222A NPN Transistor

The GES2222A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES2222A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES2222A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES2222A transistor as follows.

Circuit diagram symbol of the GES2222A transistor

GES2222A Transistor Specification

Transistor Code GES2222A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 75V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 8pF

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