GE56551 NPN Transistor

The GE56551 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GE56551 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GE56551 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GE56551 transistor as follows.

GE56551 Transistor Specification

Transistor Code		GE56551
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	60MHz

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