GE10022 NPN Transistor

The GE10022 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GE10022 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GE10022 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GE10022 transistor as follows.

GE10022 Transistor Specification

Transistor Code		GE10022
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	350V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50

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