GE10020 NPN Transistor

The GE10020 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GE10020 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GE10020 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GE10020 transistor as follows.

GE10020 Transistor Specification

Transistor Code		GE10020
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	200V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		75

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