GD363 NPN Transistor

The GD363 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GD363 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GD363 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GD363 transistor as follows.

GD363 Transistor Specification

Transistor Code		GD363
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	36W
Collector-Base Voltage (Maximum)	VCB	22V
Collector-Emitter Voltage (Maximum)	VCE	22V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	3MHz

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