GD160 PNP Transistor

The GD160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GD160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GD160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GD160 transistor as follows.

GD160 Transistor Specification

Transistor Code		GD160
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO3
Collector Power Dissipation (Maximum)	PC	5.3W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	90°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		20

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