FZT855 NPN Transistor

The FZT855 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FZT855 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FZT855 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FZT855 transistor as follows.

FZT855 Transistor Specification

Transistor Code		FZT855
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	3W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	90MHz
Collector Capacitance	CC	22pF

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