FTD1989 NPN Transistor

The FTD1989 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FTD1989 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FTD1989 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FTD1989 transistor as follows.

FTD1989 Transistor Specification

Transistor Code		FTD1989
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-89
Transistor SMD Code		DF
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		82
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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