FTB1366F PNP Transistor

The FTB1366F is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the FTB1366F transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FTB1366F transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the FTB1366F transistor as follows.

FTB1366F Transistor Specification

Transistor Code		FTB1366F
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220F
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	9MHz
Collector Capacitance	CC	150pF

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