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FTB1116A PNP Transistor

The FTB1116A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the FTB1116A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FTB1116A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the FTB1116A transistor as follows.

Circuit diagram symbol of the FTB1116A transistor

FTB1116A Transistor Specification

Transistor Code FTB1116A
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 135
Transition Frequency FT 70MHz
Collector Capacitance CC 25pF

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