FT5726DR NPN Transistor

The FT5726DR is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FT5726DR transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FT5726DR transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FT5726DR transistor as follows.

FT5726DR Transistor Specification

Transistor Code		FT5726DR
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MACRO-X
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	4500MHz

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