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FSB660A PNP Transistor

The FSB660A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the FSB660A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FSB660A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the FSB660A transistor as follows.

Circuit diagram symbol of the FSB660A transistor

FSB660A Transistor Specification

Transistor Code FSB660A
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SSOT-3 SOT-23
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 75MHz
Collector Capacitance CC 30pF

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More Transistors Datasheets in SSOT-3_SOT-23 Package

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