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FSB660 PNP Transistor

The FSB660 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the FSB660 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FSB660 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the FSB660 transistor as follows.

Circuit diagram symbol of the FSB660 transistor

FSB660 Transistor Specification

Transistor Code FSB660
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SSOT-3 SOT-23
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 75MHz
Collector Capacitance CC 30pF

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More Transistors Datasheets in SSOT-3_SOT-23 Package

FSBCW30 FSBCW30 PNP Transistor FSB649 FSB649 NPN Transistor FSB560A FSB560A NPN Transistor FSB660A FSB660A PNP Transistor FSB749 FSB749 PNP Transistor FSB619 FSB619 NPN Transistor FSB560 FSB560 NPN Transistor FSB6726 FSB6726 PNP Transistor