FJD5555 NPN Transistor

The FJD5555 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FJD5555 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FJD5555 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FJD5555 transistor as follows.

FJD5555 Transistor Specification

Transistor Code		FJD5555
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	1.34W
Collector-Base Voltage (Maximum)	VCB	1050V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	14V
Forward Current Transfer Ratio (hFE Value)		20
Collector Capacitance	CC	45pF

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