FJD5553 NPN Transistor

The FJD5553 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FJD5553 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FJD5553 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FJD5553 transistor as follows.

FJD5553 Transistor Specification

Transistor Code		FJD5553
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	1.25W
Collector-Base Voltage (Maximum)	VCB	1050V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	14V
Forward Current Transfer Ratio (hFE Value)		30
Collector Capacitance	CC	45pF

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