FHD8766 NPN Transistor

The FHD8766 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FHD8766 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FHD8766 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FHD8766 transistor as follows.

FHD8766 Transistor Specification

Transistor Code		FHD8766
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100

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