F112 NPN Transistor

The F112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the F112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The F112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the F112 transistor as follows.

F112 Transistor Specification

Transistor Code		F112
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO53
Collector Power Dissipation (Maximum)	PC	85W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	1MHz

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