ETP2008 NPN Transistor

The ETP2008 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ETP2008 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ETP2008 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ETP2008 transistor as follows.

ETP2008 Transistor Specification

Transistor Code		ETP2008
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	175V
Collector-Emitter Voltage (Maximum)	VCE	110V
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		65
Transition Frequency	FT	20MHz
Collector Capacitance	CC	7pF

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