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ETF81-050 NPN Transistor

The ETF81-050 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ETF81-050 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ETF81-050 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ETF81-050 transistor as follows.

Circuit diagram symbol of the ETF81-050 transistor

ETF81-050 Transistor Specification

Transistor Code ETF81-050
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package M101
Collector Power Dissipation (Maximum) PC 120W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100

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More Transistors Datasheets in M101 Package