ET5061 NPN Transistor

The ET5061 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ET5061 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ET5061 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ET5061 transistor as follows.

ET5061 Transistor Specification

Transistor Code		ET5061
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	400V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	8MHz

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