ESM635 NPN Transistor

The ESM635 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM635 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM635 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM635 transistor as follows.

ESM635 Transistor Specification

Transistor Code		ESM635
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40

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