ESM5045DV NPN Transistor

The ESM5045DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM5045DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM5045DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM5045DV transistor as follows.

ESM5045DV Transistor Specification

Transistor Code		ESM5045DV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISOTOP
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		2000

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