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ESM4045DV NPN Transistor

The ESM4045DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM4045DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM4045DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM4045DV transistor as follows.

Circuit diagram symbol of the ESM4045DV transistor

ESM4045DV Transistor Specification

Transistor Code ESM4045DV
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ISOTOP
Collector Power Dissipation (Maximum) PC 150W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 42A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 2000

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