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ESM3030DV NPN Transistor

The ESM3030DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM3030DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM3030DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM3030DV transistor as follows.

Circuit diagram symbol of the ESM3030DV transistor

ESM3030DV Transistor Specification

Transistor Code ESM3030DV
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ISOTOP
Collector Power Dissipation (Maximum) PC 225W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 2000

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