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ESM259 PNP Transistor

The ESM259 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ESM259 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM259 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ESM259 transistor as follows.

Circuit diagram symbol of the ESM259 transistor

ESM259 Transistor Specification

Transistor Code ESM259
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO66
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 2000
Transition Frequency FT 1MHz

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