ESM2030DV NPN Transistor

The ESM2030DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM2030DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM2030DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM2030DV transistor as follows.

ESM2030DV Transistor Specification

Transistor Code		ESM2030DV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISOTOP
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	67A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		2000

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