ESM2012DV NPN Transistor

The ESM2012DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM2012DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM2012DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM2012DV transistor as follows.

ESM2012DV Transistor Specification

Transistor Code		ESM2012DV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISOTOP
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	125V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		1200

UXPython is not the creator or an official representative of the ESM2012DV NPN transistor. You can download the official ESM2012DV NPN transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in ISOTOP Package

BUT230V NPN Transistor ESM4015 NPN Transistor ESM5001 NPN Transistor ESM7008 NPN Transistor ESM3030DV NPN Transistor ESM3045AV NPN Transistor ESM5045DV NPN Transistor ESM5007 NPN Transistor ESM3045DV NPN Transistor ESM4012 NPN Transistor ESM5009 NPN Transistor ESM10045 NPN Transistor ESM7007 NPN Transistor ESM10050 NPN Transistor ESM5008 NPN Transistor ESM10040 NPN Transistor ESM4019 NPN Transistor BUF410AI NPN Transistor ESM4017 NPN Transistor ESM2070D NPN Transistor