ESM2012DV NPN Transistor

The ESM2012DV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM2012DV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM2012DV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM2012DV transistor as follows.

ESM2012DV Transistor Specification

Transistor Code		ESM2012DV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISOTOP
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	125V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		1200

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