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ESM12A NPN Transistor

The ESM12A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM12A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM12A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM12A transistor as follows.

Circuit diagram symbol of the ESM12A transistor

ESM12A Transistor Specification

Transistor Code ESM12A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO66
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 60MHz

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