ESM1000T NPN Transistor

The ESM1000T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM1000T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM1000T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM1000T transistor as follows.

ESM1000T Transistor Specification

Transistor Code		ESM1000T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO83
Collector Power Dissipation (Maximum)	PC	400W
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		12

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