ESM1000 NPN Transistor

The ESM1000 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM1000 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM1000 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM1000 transistor as follows.

ESM1000 Transistor Specification

Transistor Code		ESM1000
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO83
Collector Power Dissipation (Maximum)	PC	400W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		8

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