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EN1132 PNP Transistor

The EN1132 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the EN1132 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The EN1132 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the EN1132 transistor as follows.

Circuit diagram symbol of the EN1132 transistor

EN1132 Transistor Specification

Transistor Code EN1132
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO106
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 60MHz
Collector Capacitance CC 45pF

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More Transistors Datasheets in TO106 Package

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