EMX1FHA NPN Transistor

The EMX1FHA is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the EMX1FHA transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The EMX1FHA transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the EMX1FHA transistor as follows.

EMX1FHA Transistor Specification

Transistor Code		EMX1FHA
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		EMT6
Transistor SMD Code		X1
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	180MHz
Collector Capacitance	CC	2pF

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More Transistors Datasheets in EMT6 Package

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